RU6199Q Datasheet and Replacement
Type Designator: RU6199Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 1500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: TO-247
RU6199Q substitution
RU6199Q Datasheet (PDF)
ru6199q.pdf

RU6199QN-Channel Advanced Power MOSFETFeatures Pin Description 60V/200ARDS (ON)=2.8 m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableApplicationsTO-247Automotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingN-Channel MOSFETAbsolute Maximum
ru6199r.pdf

RU6199RN-Channel Advanced Power MOSFETFeatures Pin Description 60V/200ARDS (ON)=2.8 m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableTO-220ApplicationsAutomotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingN-Channel MOSFETAbsolute Maximum
ru6199s.pdf

RU6199SN-Channel Advanced Power MOSFETFeatures Pin Description 60V/200A,D RDS (ON) =2.8m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedGS Lead Free and Green Devices Available (RoHS Compliant)TO263DApplications DC-DC Converters and Off-line UPS Switching ApplicationsGSN-Channel MOSFETAbsolu
Datasheet: RU60E16R , RU60E25L , RU60E25R , RU60E5D , RU60E5H , RU60E6D , RU60E6H , RU60P60R , IRFP260N , RU6199R , RU65120R , RU6581L , RU6581R , RU6881R , RU6888M , RU6888S , RU6H1L .
History: RU60E5D | BSH202 | SI3424DV | WMJ10N80D1 | SDF054JAA-U | RU60E6D | 2SK1168
Keywords - RU6199Q MOSFET datasheet
RU6199Q cross reference
RU6199Q equivalent finder
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History: RU60E5D | BSH202 | SI3424DV | WMJ10N80D1 | SDF054JAA-U | RU60E6D | 2SK1168



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