RU6199Q Specs and Replacement
Type Designator: RU6199Q
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 1500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: TO-247
RU6199Q substitution
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RU6199Q datasheet
ru6199q.pdf
RU6199Q N-Channel Advanced Power MOSFET Features Pin Description 60V/200A RDS (ON)=2.8 m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET Absolute Maximum ... See More ⇒
ru6199r.pdf
RU6199R N-Channel Advanced Power MOSFET Features Pin Description 60V/200A RDS (ON)=2.8 m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET Absolute Maximum ... See More ⇒
ru6199s.pdf
RU6199S N-Channel Advanced Power MOSFET Features Pin Description 60V/200A, D RDS (ON) =2.8m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested G S Lead Free and Green Devices Available (RoHS Compliant) TO263 D Applications DC-DC Converters and Off-line UPS Switching Applications G S N-Channel MOSFET Absolu... See More ⇒
Detailed specifications: RU60E16R, RU60E25L, RU60E25R, RU60E5D, RU60E5H, RU60E6D, RU60E6H, RU60P60R, IRF640N, RU6199R, RU65120R, RU6581L, RU6581R, RU6881R, RU6888M, RU6888S, RU6H1L
Keywords - RU6199Q MOSFET specs
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