All MOSFET. RU6581L Datasheet

 

RU6581L Datasheet and Replacement


   Type Designator: RU6581L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 81 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-252
 

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RU6581L Datasheet (PDF)

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RU6581L

RU6581LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 65V/81A,RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete

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RU6581L

RU6581RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 65V/81A,RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete

Datasheet: RU60E5D , RU60E5H , RU60E6D , RU60E6H , RU60P60R , RU6199Q , RU6199R , RU65120R , IRF3710 , RU6581R , RU6881R , RU6888M , RU6888S , RU6H1L , RU6H2K , RU6H2L , RU6H2R .

History: BSC072N08NS5 | SM4802DSK | SI2308A | WMJ10N80D1 | SDF044JAB-S | 2SK1169 | VIS30023

Keywords - RU6581L MOSFET datasheet

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