RU6581L MOSFET. Datasheet pdf. Equivalent
Type Designator: RU6581L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 81 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 58 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 360 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-252
RU6581L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU6581L Datasheet (PDF)
ru6581l.pdf
RU6581LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 65V/81A,RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete
ru6581r.pdf
RU6581RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 65V/81A,RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: PSMN1R0-40YSH
History: PSMN1R0-40YSH
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918