All MOSFET. RU6581L Datasheet

 

RU6581L Datasheet and Replacement


   Type Designator: RU6581L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 81 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-252
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RU6581L Datasheet (PDF)

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RU6581L

RU6581LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 65V/81A,RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete

 8.1. Size:303K  ruichips
 ru6581r.pdf pdf_icon

RU6581L

RU6581RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 65V/81A,RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

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