RU6888M MOSFET. Datasheet pdf. Equivalent
Type Designator: RU6888M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 75 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 310 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: PDFN5060
RU6888M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU6888M Datasheet (PDF)
ru6888m.pdf
RU6888M N-Channel Advanced Power MOSFET Features Pin Description 60V/62A, RDS (ON) =7m(Typ.)@VGS=10V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available PDFN5060 (RoHS Compliant) Applications Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Uni
ru6888.pdf
RU6888N-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/88A,RDS (ON) =6.0m (Type) @ VGS=10V Ultra Low On-ResistanceTO-220 TO-220F Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-263 TO-247 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Applicat
ru6888r.pdf
RU6888RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/88A,RDS (ON) =6m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application Systems Inverte
ru6888s.pdf
RU6888SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 68V/88A,RDS (ON) =6m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche testedTO-263 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application Systems Inverte
ru6888r3.pdf
RU6888R3N-Channel Advanced Power MOSFETFeatures Pin Description 68V/88A,Insulation Slug RDS (ON) =6m(Typ.)@VGS=10V Insulation Slug(VISO1500VAC) Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedF t S it hi d F ll A l h R t d 100% avalanche tested 175C Operating TemperatureS Lead Free and Green
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: HRLD33N03K | PSMN0R9-30ULD | CSD19534KCS | SVD2N60T
History: HRLD33N03K | PSMN0R9-30ULD | CSD19534KCS | SVD2N60T
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918