RU6H2K MOSFET. Datasheet pdf. Equivalent
Type Designator: RU6H2K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO-251
RU6H2K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU6H2K Datasheet (PDF)
ru6h2k.pdf
RU6H2KN-Channel Advanced Power MOSFETFeatures Pin Description 600V/2A, RDS (ON) =4000m(Typ.)@VGS=10V Gate charge minimized Low Crss( Typ. 5pF) Extremely high dv/dt capability 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO251DApplications High efficiency switch mode power supplies LightingGSN-Cha
ru6h2r.pdf
RU6H2RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description600V/2A,RDS (ON) =4 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 5pF) Extremely high dv/dt capabilityTO-220 100% avalanche tested Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximum Ratin
ru6h2l.pdf
RU6H2LN-Channel Advanced Power MOSFETFeatures Pin Description 600V/2A,D RDS (ON) =4000m(Typ.)@VGS=10V Gate charge minimized Low Crss( Typ. 5pF) Extremely high dv/dt capability 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications High efficiency switch mode power supplies LightingGSN-Cha
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
