RU6H2K Datasheet and Replacement
Type Designator: RU6H2K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 9 nC
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO-251
RU6H2K substitution
RU6H2K Datasheet (PDF)
ru6h2k.pdf

RU6H2KN-Channel Advanced Power MOSFETFeatures Pin Description 600V/2A, RDS (ON) =4000m(Typ.)@VGS=10V Gate charge minimized Low Crss( Typ. 5pF) Extremely high dv/dt capability 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO251DApplications High efficiency switch mode power supplies LightingGSN-Cha
ru6h2r.pdf

RU6H2RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description600V/2A,RDS (ON) =4 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 5pF) Extremely high dv/dt capabilityTO-220 100% avalanche tested Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximum Ratin
ru6h2l.pdf

RU6H2LN-Channel Advanced Power MOSFETFeatures Pin Description 600V/2A,D RDS (ON) =4000m(Typ.)@VGS=10V Gate charge minimized Low Crss( Typ. 5pF) Extremely high dv/dt capability 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications High efficiency switch mode power supplies LightingGSN-Cha
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Keywords - RU6H2K MOSFET datasheet
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