RU6H2R Specs and Replacement

Type Designator: RU6H2R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO-220

RU6H2R substitution

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RU6H2R datasheet

 ..1. Size:294K  ruichips
 ru6h2r.pdf pdf_icon

RU6H2R

RU6H2R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 600V/2A, RDS (ON) =4 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 5pF) Extremely high dv/dt capability TO-220 100% avalanche tested Lead Free and Green Available Applications High efficiency switch mode power supplies N-Channel MOSFET Lighting Absolute Maximum Ratin... See More ⇒

 9.1. Size:286K  ruichips
 ru6h2k.pdf pdf_icon

RU6H2R

RU6H2K N-Channel Advanced Power MOSFET Features Pin Description 600V/2A, RDS (ON) =4000m (Typ.)@VGS=10V Gate charge minimized Low Crss( Typ. 5pF) Extremely high dv/dt capability 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G D S TO251 D Applications High efficiency switch mode power supplies Lighting G S N-Cha... See More ⇒

 9.2. Size:328K  ruichips
 ru6h2l.pdf pdf_icon

RU6H2R

RU6H2L N-Channel Advanced Power MOSFET Features Pin Description 600V/2A, D RDS (ON) =4000m (Typ.)@VGS=10V Gate charge minimized Low Crss( Typ. 5pF) Extremely high dv/dt capability 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G S TO252 D Applications High efficiency switch mode power supplies Lighting G S N-Cha... See More ⇒

Detailed specifications: RU6581L, RU6581R, RU6881R, RU6888M, RU6888S, RU6H1L, RU6H2K, RU6H2L, 7N65, RU6H4R, RU6H5L, RU6H7R, RU6H9P, RU6H9R, RU6Z5R, RU6Z8R, RU70100R

Keywords - RU6H2R MOSFET specs

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