RU6H5L Datasheet and Replacement
Type Designator: RU6H5L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO-252
RU6H5L substitution
RU6H5L Datasheet (PDF)
ru6h5l.pdf

RU6H5L N-Channel Advanced Power MOSFET Features Pin Description 600V/4.5A, RDS (ON) =1.9 (Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High efficiency switch mode power supplies Lighting N-Channel MOSFET Absolute Maximum Ra
Datasheet: RU6881R , RU6888M , RU6888S , RU6H1L , RU6H2K , RU6H2L , RU6H2R , RU6H4R , IRF9540 , RU6H7R , RU6H9P , RU6H9R , RU6Z5R , RU6Z8R , RU70100R , RU70190R , RU70200R .
History: TMAN11N90Z | SED14N65G
Keywords - RU6H5L MOSFET datasheet
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History: TMAN11N90Z | SED14N65G



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