RU6H9P Datasheet and Replacement
Type Designator: RU6H9P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-220F
RU6H9P substitution
RU6H9P Datasheet (PDF)
ru6h9p.pdf

RU6H9PN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description600V/9.5A,RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 20pF) Extremely high dv/dt capability 100% avalanche testedTO-220F Lead Free and Green AvailableApplications High efficiency switch mode powersuppliesN-Channel MOSFET LightingAbsolute Maximum
ru6h9r.pdf

RU6H9RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 600V/9.5A,RDS (ON) =0.7 (Typ.) @ VGS=10V Gate charge minimized Low Crss( Typ. 20pF) Extremely high dv/dt capabilityTO-220 100% avalanche tested Lead Free and Green AvailableApplications High efficiency switch mode powersupplies LightingN-Channel MOSFETAbsolute Maximum
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: STS2308A
Keywords - RU6H9P MOSFET datasheet
RU6H9P cross reference
RU6H9P equivalent finder
RU6H9P lookup
RU6H9P substitution
RU6H9P replacement
History: STS2308A



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