RU6Z5R Datasheet and Replacement
Type Designator: RU6Z5R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 20 nC
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO-220
RU6Z5R substitution
RU6Z5R Datasheet (PDF)
ru6z5r.pdf

RU6Z5RN-Channel Advanced Power MOSFETFeatures Pin Description 650V/4.5A, RDS (ON) =1800m(Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)TO220Applications High efficiency switch mode power supplies LightingN-Channel MOSFETAbsolute Maximum RatingsSymbol Param
Datasheet: RU6H2K , RU6H2L , RU6H2R , RU6H4R , RU6H5L , RU6H7R , RU6H9P , RU6H9R , 12N60 , RU6Z8R , RU70100R , RU70190R , RU70200R , RU7080L , RU7085R , RU7088A , RU70E15L .
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