All MOSFET. RU6Z8R Datasheet

 

RU6Z8R MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU6Z8R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO-220

 RU6Z8R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU6Z8R Datasheet (PDF)

 ..1. Size:292K  ruichips
 ru6z8r.pdf

RU6Z8R RU6Z8R

RU6Z8RN-Channel Advanced Power MOSFETFeatures Pin Description 650V/8A, RDS (ON) =900m(Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)TO220Applications High efficiency switch mode power supplies LightingN-Channel MOSFETAbsolute Maximum RatingsSymbol Paramete

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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