All MOSFET. RU6Z8R Datasheet

 

RU6Z8R Datasheet and Replacement


   Type Designator: RU6Z8R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO-220
 

 RU6Z8R substitution

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RU6Z8R Datasheet (PDF)

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RU6Z8R

RU6Z8RN-Channel Advanced Power MOSFETFeatures Pin Description 650V/8A, RDS (ON) =900m(Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)TO220Applications High efficiency switch mode power supplies LightingN-Channel MOSFETAbsolute Maximum RatingsSymbol Paramete

Datasheet: RU6H2L , RU6H2R , RU6H4R , RU6H5L , RU6H7R , RU6H9P , RU6H9R , RU6Z5R , K4145 , RU70100R , RU70190R , RU70200R , RU7080L , RU7085R , RU7088A , RU70E15L , RU70E4D .

History: WSP8810

Keywords - RU6Z8R MOSFET datasheet

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