RU6Z8R Specs and Replacement
Type Designator: RU6Z8R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO-220
RU6Z8R substitution
- MOSFET ⓘ Cross-Reference Search
RU6Z8R datasheet
ru6z8r.pdf
RU6Z8R N-Channel Advanced Power MOSFET Features Pin Description 650V/8A, RDS (ON) =900m (Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO220 Applications High efficiency switch mode power supplies Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Paramete... See More ⇒
Detailed specifications: RU6H2L, RU6H2R, RU6H4R, RU6H5L, RU6H7R, RU6H9P, RU6H9R, RU6Z5R, 2N7002, RU70100R, RU70190R, RU70200R, RU7080L, RU7085R, RU7088A, RU70E15L, RU70E4D
Keywords - RU6Z8R MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
