RU6Z8R Datasheet and Replacement
Type Designator: RU6Z8R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO-220
RU6Z8R substitution
RU6Z8R Datasheet (PDF)
ru6z8r.pdf

RU6Z8RN-Channel Advanced Power MOSFETFeatures Pin Description 650V/8A, RDS (ON) =900m(Typ.)@VGS=10V Super High Dense Cell Design Fast Switching 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)TO220Applications High efficiency switch mode power supplies LightingN-Channel MOSFETAbsolute Maximum RatingsSymbol Paramete
Datasheet: RU6H2L , RU6H2R , RU6H4R , RU6H5L , RU6H7R , RU6H9P , RU6H9R , RU6Z5R , K3569 , RU70100R , RU70190R , RU70200R , RU7080L , RU7085R , RU7088A , RU70E15L , RU70E4D .
History: BSP315P | AP2301EN-HF | SDFE22JAB
Keywords - RU6Z8R MOSFET datasheet
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History: BSP315P | AP2301EN-HF | SDFE22JAB



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