All MOSFET. RU70100R Datasheet

 

RU70100R Datasheet and Replacement


   Type Designator: RU70100R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-220
 

 RU70100R substitution

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RU70100R Datasheet (PDF)

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RU70100R

RU70100R N-Channel Advanced Power MOSFET Features Pin Description 70V/100A, RDS (ON) =4.5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green Available Applications Switching Application Systems

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 ru70190r.pdf pdf_icon

RU70100R

RU70190RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 70V/190A,RDS (ON) =4.2m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Battery Inverter/UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating

Datasheet: RU6H2R , RU6H4R , RU6H5L , RU6H7R , RU6H9P , RU6H9R , RU6Z5R , RU6Z8R , K4145 , RU70190R , RU70200R , RU7080L , RU7085R , RU7088A , RU70E15L , RU70E4D , RU70E4H .

History: 2SJ501

Keywords - RU70100R MOSFET datasheet

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