All MOSFET. RU70E4H Datasheet

 

RU70E4H Datasheet and Replacement


   Type Designator: RU70E4H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOP-8
 

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RU70E4H Datasheet (PDF)

 ..1. Size:277K  ruichips
 ru70e4h.pdf pdf_icon

RU70E4H

RU70E4HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 70V/4A,RDS (ON) =80m (Typ.) @ VGS=10VRDS (ON) =90m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rat

 8.1. Size:252K  ruichips
 ru70e4d.pdf pdf_icon

RU70E4H

RU70E4DN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 70V/4A,RDS (ON) =80m (Typ.) @ VGS=10VRDS (ON) =90m (Typ.) @ VGS=4.5V ESD Protected Reliable and RuggedSOT-223 Ultra Low On-Resistance Lead Free and Green AvailableApplications Power Management DC-DC ConverterN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R

 9.1. Size:290K  ruichips
 ru70e15l.pdf pdf_icon

RU70E4H

RU70E15LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 70V/15A,RDS (ON) =90m(Typ.)@VGS=10VRDS (ON) =100m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power ManagementN-Channel MOSFETAbsolute Maximu

Datasheet: RU70100R , RU70190R , RU70200R , RU7080L , RU7085R , RU7088A , RU70E15L , RU70E4D , SKD502T , RU75110R , RU75110S , RU75150R , RU75170S , RU75210R , RU75230S , RU75260Q , RU75400Q .

Keywords - RU70E4H MOSFET datasheet

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