RU70E4H Datasheet. Specs and Replacement

Type Designator: RU70E4H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOP-8

RU70E4H substitution

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RU70E4H datasheet

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RU70E4H

RU70E4H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 70V/4A, RDS (ON) =80m (Typ.) @ VGS=10V RDS (ON) =90m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD Protected SOP-8 Lead Free and Green Available Applications Power Management Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rat... See More ⇒

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 ru70e4d.pdf pdf_icon

RU70E4H

RU70E4D N-Channel Advanced Power MOSFET MOSFET Features Pin Description 70V/4A, RDS (ON) =80m (Typ.) @ VGS=10V RDS (ON) =90m (Typ.) @ VGS=4.5V ESD Protected Reliable and Rugged SOT-223 Ultra Low On-Resistance Lead Free and Green Available Applications Power Management DC-DC Converter N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter R... See More ⇒

 9.1. Size:290K  ruichips
 ru70e15l.pdf pdf_icon

RU70E4H

RU70E15L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 70V/15A, RDS (ON) =90m (Typ.)@VGS=10V RDS (ON) =100m (Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO252 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management N-Channel MOSFET Absolute Maximu... See More ⇒

Detailed specifications: RU70100R, RU70190R, RU70200R, RU7080L, RU7085R, RU7088A, RU70E15L, RU70E4D, SKD502T, RU75110R, RU75110S, RU75150R, RU75170S, RU75210R, RU75230S, RU75260Q, RU75400Q

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