RU70E4H Datasheet and Replacement
Type Designator: RU70E4H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 16 nC
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOP-8
RU70E4H substitution
RU70E4H Datasheet (PDF)
ru70e4h.pdf

RU70E4HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 70V/4A,RDS (ON) =80m (Typ.) @ VGS=10VRDS (ON) =90m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rat
ru70e4d.pdf

RU70E4DN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 70V/4A,RDS (ON) =80m (Typ.) @ VGS=10VRDS (ON) =90m (Typ.) @ VGS=4.5V ESD Protected Reliable and RuggedSOT-223 Ultra Low On-Resistance Lead Free and Green AvailableApplications Power Management DC-DC ConverterN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R
ru70e15l.pdf

RU70E15LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 70V/15A,RDS (ON) =90m(Typ.)@VGS=10VRDS (ON) =100m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power ManagementN-Channel MOSFETAbsolute Maximu
Datasheet: RU70100R , RU70190R , RU70200R , RU7080L , RU7085R , RU7088A , RU70E15L , RU70E4D , IRF9540N , RU75110R , RU75110S , RU75150R , RU75170S , RU75210R , RU75230S , RU75260Q , RU75400Q .
History: SPB80N08S2L | RU6H5L | STS2601 | BUK7614-30 | WSP6064 | CED4311 | FRK254D
Keywords - RU70E4H MOSFET datasheet
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History: SPB80N08S2L | RU6H5L | STS2601 | BUK7614-30 | WSP6064 | CED4311 | FRK254D



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