All MOSFET. RU75230S Datasheet

 

RU75230S Datasheet and Replacement


   Type Designator: RU75230S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 230 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 188 nC
   tr ⓘ - Rise Time: 312 nS
   Cossⓘ - Output Capacitance: 1380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-263
 

 RU75230S substitution

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RU75230S Datasheet (PDF)

 ..1. Size:322K  ruichips
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RU75230S

RU75230SN-Channel Advanced Power MOSFETFeatures Pin Description 75V/230A, RDS (ON) =2.6m(Typ.)@VGS=10VD Ultra Low On-Resistance Fast Switching Speed High Power And Current Handling Capability 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableGSTO263DApplications High Current Switching Applications DC/

 ..2. Size:203K  inchange semiconductor
ru75230s.pdf pdf_icon

RU75230S

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor RU75230SFEATURESWith To-263(D2PAK) packageUltra low on-resistanceFast Switching SpeedHigh power and current handling capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsDC-DC convertorsABS

 9.1. Size:447K  ruichips
ru75210r.pdf pdf_icon

RU75230S

RU75210RN-Channel Advanced Power MOSFETFeatures Pin Description 75V/210A, RDS (ON) =3.5m(Typ.)@VGS=10V Reliable and Rugged 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSApplicationsTO220 High Speed Power SwitchingDDDD

 9.2. Size:305K  ruichips
ru75260q.pdf pdf_icon

RU75230S

RU75260QN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 75V/260A,RDS (ON) =2.8m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance Reliable and Rugged 100% avalanche testedTO-247 Lead Free and Green Devices Available(RoHS Compliant)Applications High Speed Power Switching UPSN-Channel MOSFETAbsolute Maximum

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: FDB8870

Keywords - RU75230S MOSFET datasheet

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