Справочник MOSFET. RU75230S

 

RU75230S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RU75230S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 333 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 230 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 312 ns
   Cossⓘ - Выходная емкость: 1380 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для RU75230S

 

 

RU75230S Datasheet (PDF)

 ..1. Size:322K  ruichips
 ru75230s.pdf

RU75230S RU75230S

RU75230SN-Channel Advanced Power MOSFETFeatures Pin Description 75V/230A, RDS (ON) =2.6m(Typ.)@VGS=10VD Ultra Low On-Resistance Fast Switching Speed High Power And Current Handling Capability 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableGSTO263DApplications High Current Switching Applications DC/

 ..2. Size:203K  inchange semiconductor
 ru75230s.pdf

RU75230S RU75230S

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor RU75230SFEATURESWith To-263(D2PAK) packageUltra low on-resistanceFast Switching SpeedHigh power and current handling capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsDC-DC convertorsABS

 9.1. Size:447K  ruichips
 ru75210r.pdf

RU75230S RU75230S

RU75210RN-Channel Advanced Power MOSFETFeatures Pin Description 75V/210A, RDS (ON) =3.5m(Typ.)@VGS=10V Reliable and Rugged 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSApplicationsTO220 High Speed Power SwitchingDDDD

 9.2. Size:305K  ruichips
 ru75260q.pdf

RU75230S RU75230S

RU75260QN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 75V/260A,RDS (ON) =2.8m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance Reliable and Rugged 100% avalanche testedTO-247 Lead Free and Green Devices Available(RoHS Compliant)Applications High Speed Power Switching UPSN-Channel MOSFETAbsolute Maximum

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