RU7582S MOSFET. Datasheet pdf. Equivalent
Type Designator: RU7582S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 82 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 85 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 460 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO-263
RU7582S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU7582S Datasheet (PDF)
ru7582s.pdf
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RU7582SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 75V/82A,RDS (ON) =7.5m(tpy.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications Switching Application Systems UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParame
ru7580r.pdf
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RU7580RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 75V/80A,RDS (ON) =8m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Motor ControlN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Rat
ru7588r3.pdf
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RU7588R3N-Channel Advanced Power MOSFETFeatures Pin Description 80V/80A,Insulation Slug RDS (ON) =7m(Typ.)@VGS=10V Insulation Slug(VISO1500VAC) Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedF t S it hi d F ll A l h R t d 100% avalanche tested 175C Operating TemperatureS Lead Free and Green
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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