RU8590R Datasheet. Specs and Replacement
Type Designator: RU8590R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 188 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 480 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-220
RU8590R substitution
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RU8590R datasheet
ru8590r.pdf
RU8590R N-Channel Advanced Power MOSFET Features Pin Description 85V/90A, RDS (ON) =5.8m (Typ.)@VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications High Speed Power Switching UPS G S N-Chan... See More ⇒
ru8590s.pdf
RU8590S N-Channel Advanced Power MOSFET Features Pin Description 85V/90A, RDS (ON) =5.8m (Typ.)@VGS=10V D Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D D D D D D D Applications ... See More ⇒
Detailed specifications: RU8080S, RU8099R, RU80N15Q, RU80N15R, RU80N15S, RU80T4H, RU8205C6, RU8205G, 20N50, RUE002N02TL, RUE003N02TL, RUF015N02TL, RUF025N02TL, RUL035N02TR, RUM001L02, RUM002N02T2L, RUM002N05T2L
Keywords - RU8590R MOSFET specs
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