All MOSFET. RU8590R Datasheet

 

RU8590R Datasheet and Replacement


   Type Designator: RU8590R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-220
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RU8590R Datasheet (PDF)

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RU8590R

RU8590RN-Channel Advanced Power MOSFETFeatures Pin Description 85V/90A, RDS (ON) =5.8m(Typ.)@VGS=10V Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplications High Speed Power Switching UPSGSN-Chan

 8.1. Size:362K  ruichips
 ru8590s.pdf pdf_icon

RU8590R

RU8590SN-Channel Advanced Power MOSFETFeatures Pin Description 85V/90A, RDS (ON) =5.8m(Typ.)@VGS=10VD Ultra Low On-Resistance Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DDDDDDDApplications

Datasheet: RU8080S , RU8099R , RU80N15Q , RU80N15R , RU80N15S , RU80T4H , RU8205C6 , RU8205G , K2611 , RUE002N02TL , RUE003N02TL , RUF015N02TL , RUF025N02TL , RUL035N02TR , RUM001L02 , RUM002N02T2L , RUM002N05T2L .

History: 2SJ473-01S | IRF7759L2TR1PBF

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