RUM001L02 Datasheet. Specs and Replacement

Type Designator: RUM001L02

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 3.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: VMT3

RUM001L02 substitution

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RUM001L02 datasheet

 ..1. Size:2209K  rohm
rum001l02.pdf pdf_icon

RUM001L02

RUM001L02 Datasheet Nch 20V 100mA Small Signal MOSFET lOutline l SOT-723 VDSS 20V SC-105AA RDS(on)(Max.) 3.5 VMT3 ID 100mA PD 150mW lInner circuit l lFeatures l 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. lPackagi... See More ⇒

 ..2. Size:584K  ruichips
rum001l02.pdf pdf_icon

RUM001L02

RUM001L02 Nch 20V 100mA Small Signal MOSFET Data Sheet lOutline VDSS 20V VMT3 (3) RDS(on) (Max.) 3.5W ID 100mA (1) PD 150mW (2) lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIODE l... See More ⇒

 9.1. Size:172K  rohm
rum002n05.pdf pdf_icon

RUM001L02

1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET VMT3 Features 1) High speed switing. 2) Small package(VMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code T2L Basic ordering unit (pieces) 8000 1 RUM002... See More ⇒

 9.2. Size:100K  rohm
rum003n02.pdf pdf_icon

RUM001L02

RUM003N02 Transistor 1.8V Drive Nch MOSFET RUM003N02 Dimensions (Unit mm) Structure Silicon N-channel VMT3 MOSFET Applications Switching (1)Base(IN)(Gate) Features (2)Emitter(GND)(Source) 1) Low on-resistance. (3)Collector(OUT)(Drain) Abbreviated symbol QT 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. ... See More ⇒

Detailed specifications: RU8205C6, RU8205G, RU8590R, RUE002N02TL, RUE003N02TL, RUF015N02TL, RUF025N02TL, RUL035N02TR, 8N60, RUM002N02T2L, RUM002N05T2L, RUM003N02T2L, RUQ050N02FRA, RUQ050N02TR, RUR020N02TL, RUR040N02FRA, RUR040N02TL

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.