RUM001L02 MOSFET. Datasheet pdf. Equivalent
Type Designator: RUM001L02
SMD Transistor Code: RW
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.15 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 0.1 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 4 nS
Drain-Source Capacitance (Cd): 3.3 pF
Maximum Drain-Source On-State Resistance (Rds): 3.5 Ohm
Package: VMT3
RUM001L02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RUM001L02 Datasheet (PDF)
1.1. rum001l02.pdf 
Size:584K _ruichips
RUM001L02 Nch 20V 100mA Small Signal MOSFET Data Sheet lOutline VDSS 20V VMT3 (3) RDS(on) (Max.) 3.5W ID 100mA (1) PD 150mW (2) lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIODE l
5.1. rum003n02.pdf Size:100K _rohm
RUM003N02 Transistor 1.8V Drive Nch MOSFET RUM003N02 Dimensions (Unit : mm) Structure Silicon N-channel VMT3 MOSFET Applications Switching (1)Base(IN)(Gate) Features (2)Emitter(GND)(Source) 1) Low on-resistance. (3)Collector(OUT)(Drain) Abbreviated symbol : QT 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. 4
5.2. rum002n02.pdf Size:214K _rohm
1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit : mm) Silicon N-channel VMT3 MOSFET Applications Switching (1)Gate Features (2)Souce (3)Drain Abbreviated symbol : QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packag
5.3. rum002n05.pdf Size:172K _rohm
1.2V Drive Nch MOSFET RUM002N05 ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET VMT3 ?Features 1) High speed switing. 2) Small package(VMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH ? Application Switching ? Packaging specifications ? Inner circuit Package Taping (3) Type Code T2L Basic ordering unit (pieces) 8000 ?1 RUM002N05 ? ?2 ? Abso
5.4. rum002n02t2l.pdf Size:213K _ruichips
1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit : mm) Silicon N-channel VMT3 MOSFET Applications Switching (1)Gate Features (2)Souce (3)Drain Abbreviated symbol : QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac
5.5. rum003n02t2l.pdf Size:98K _ruichips
RUM003N02 Transistor 1.8V Drive Nch MOSFET RUM003N02 Dimensions (Unit : mm) Structure Silicon N-channel VMT3 MOSFET Applications Switching (1)Base(IN)(Gate) Features (2)Emitter(GND)(Source) 1) Low on-resistance. (3)Collector(OUT)(Drain) Abbreviated symbol : QT 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment.
5.6. rum002n05t2l.pdf Size:170K _ruichips
1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET VMT3 Features 1) High speed switing. 2) Small package(VMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code T2L Basic ordering unit (pieces) 8000 ∗1 RUM002
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