RUQ050N02FRA Datasheet and Replacement
Type Designator: RUQ050N02FRA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TSMT6
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RUQ050N02FRA Datasheet (PDF)
ruq050n02fra.pdf

AEC-Q101 Qualified1.5V Drive Nch MOSFET RUQ050N02RUQ050N02FRAStructure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive ApplicationsSwitching Each lead has same dimensionsAbbreviated symbol : XGPackaging specificationsInner circuitPackage T
ruq050n02.pdf

1.5V Drive Nch MOSFET RUQ050N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive ApplicationsSwitching Each lead has same dimensions Abbreviated symbol : XGPackaging specifications Inner circuit Package Taping(6) (5) (4)Type Code
ruq050n02tr.pdf

1.5V Drive Nch MOSFET RUQ050N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive ApplicationsSwitching Each lead has same dimensions Abbreviated symbol : XGPackaging specifications Inner circuit Package Taping(6) (5) (4)Type Code
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: WMB31430DN | SVGP20110NSTR | SMG2325P | MXP4004AT | BSD235C | SVG069R5NMJ | MEE42942-G
Keywords - RUQ050N02FRA MOSFET datasheet
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History: WMB31430DN | SVGP20110NSTR | SMG2325P | MXP4004AT | BSD235C | SVG069R5NMJ | MEE42942-G



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