RUQ050N02TR Datasheet and Replacement
Type Designator: RUQ050N02TR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TSMT6
RUQ050N02TR substitution
RUQ050N02TR Datasheet (PDF)
ruq050n02tr.pdf

1.5V Drive Nch MOSFET RUQ050N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive ApplicationsSwitching Each lead has same dimensions Abbreviated symbol : XGPackaging specifications Inner circuit Package Taping(6) (5) (4)Type Code
ruq050n02.pdf

1.5V Drive Nch MOSFET RUQ050N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive ApplicationsSwitching Each lead has same dimensions Abbreviated symbol : XGPackaging specifications Inner circuit Package Taping(6) (5) (4)Type Code
ruq050n02fra.pdf

AEC-Q101 Qualified1.5V Drive Nch MOSFET RUQ050N02RUQ050N02FRAStructure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive ApplicationsSwitching Each lead has same dimensionsAbbreviated symbol : XGPackaging specificationsInner circuitPackage T
Datasheet: RUF015N02TL , RUF025N02TL , RUL035N02TR , RUM001L02 , RUM002N02T2L , RUM002N05T2L , RUM003N02T2L , RUQ050N02FRA , IRF1405 , RUR020N02TL , RUR040N02FRA , RUR040N02TL , RUS100N02 , PHB101NQ04T , PHB108NQ03LT , PHB110NQ06LT , PHB110NQ08LT .
History: SED14N65G | TMAN11N90Z
Keywords - RUQ050N02TR MOSFET datasheet
RUQ050N02TR cross reference
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RUQ050N02TR replacement
History: SED14N65G | TMAN11N90Z



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