RUQ050N02TR Datasheet. Specs and Replacement
Type Designator: RUQ050N02TR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TSMT6
RUQ050N02TR substitution
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RUQ050N02TR datasheet
ruq050n02tr.pdf
1.5V Drive Nch MOSFET RUQ050N02 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive Applications Switching Each lead has same dimensions Abbreviated symbol XG Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code ... See More ⇒
ruq050n02.pdf
1.5V Drive Nch MOSFET RUQ050N02 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive Applications Switching Each lead has same dimensions Abbreviated symbol XG Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code ... See More ⇒
ruq050n02fra.pdf
AEC-Q101 Qualified 1.5V Drive Nch MOSFET RUQ050N02 RUQ050N02FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive Applications Switching Each lead has same dimensions Abbreviated symbol XG Packaging specifications Inner circuit Package T... See More ⇒
Detailed specifications: RUF015N02TL, RUF025N02TL, RUL035N02TR, RUM001L02, RUM002N02T2L, RUM002N05T2L, RUM003N02T2L, RUQ050N02FRA, STP65NF06, RUR020N02TL, RUR040N02FRA, RUR040N02TL, RUS100N02, PHB101NQ04T, PHB108NQ03LT, PHB110NQ06LT, PHB110NQ08LT
Keywords - RUQ050N02TR MOSFET specs
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