RUS100N02 Datasheet. Specs and Replacement

Type Designator: RUS100N02

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SOP-8

RUS100N02 substitution

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RUS100N02 datasheet

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RUS100N02

RUS100N02 Datasheet Nch 20V 10A Middle Power MOSFET lOutline l SOP8 VDSS 20V RDS(on)(Max.) 12m ID 10A PD 2.0W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (SOP8). 3) Pb-free lead plating ; RoHS compliant. lPackaging speci... See More ⇒

Detailed specifications: RUM002N02T2L, RUM002N05T2L, RUM003N02T2L, RUQ050N02FRA, RUQ050N02TR, RUR020N02TL, RUR040N02FRA, RUR040N02TL, IRFZ46N, PHB101NQ04T, PHB108NQ03LT, PHB110NQ06LT, PHB110NQ08LT, PHB112N06T, PHB119NQ06T, PHB11N06LT, PHB129NQ04LT

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.