All MOSFET. RUS100N02 Datasheet

 

RUS100N02 Datasheet and Replacement


   Type Designator: RUS100N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP-8
 

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RUS100N02 Datasheet (PDF)

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RUS100N02

RUS100N02DatasheetNch 20V 10A Middle Power MOSFETlOutlinel SOP8VDSS20VRDS(on)(Max.) 12m ID 10A PD2.0W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package (SOP8).3) Pb-free lead plating ; RoHS compliant.lPackaging speci

Datasheet: RUM002N02T2L , RUM002N05T2L , RUM003N02T2L , RUQ050N02FRA , RUQ050N02TR , RUR020N02TL , RUR040N02FRA , RUR040N02TL , STP65NF06 , PHB101NQ04T , PHB108NQ03LT , PHB110NQ06LT , PHB110NQ08LT , PHB112N06T , PHB119NQ06T , PHB11N06LT , PHB129NQ04LT .

History: CEU55N10 | 7NM70G-TMN2-T | FTB07N08N | PSMN4R0-25YLC | FQPF6N25 | FQB9P25TM | 2SK2834N

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