RUS100N02 MOSFET. Datasheet pdf. Equivalent
Type Designator: RUS100N02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 65 nS
Drain-Source Capacitance (Cd): 550 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: SOP-8
RUS100N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RUS100N02 Datasheet (PDF)
1.1. rus100n02.pdf 
Size:2840K _ruichips
RUS100N02 Datasheet Nch 20V 10A Middle Power MOSFET lOutline l SOP8 VDSS 20V RDS(on)(Max.) 12mΩ ID ±10A PD 2.0W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (SOP8). 3) Pb-free lead plating ; RoHS compliant. lPackaging speci
Datasheet: RUM002N02T2L , RUM002N05T2L , RUM003N02T2L , RUQ050N02FRA , RUQ050N02TR , RUR020N02TL , RUR040N02FRA , RUR040N02TL , IRFP260M , PHB101NQ04T , PHB108NQ03LT , PHB110NQ06LT , PHB110NQ08LT , PHB112N06T , PHB119NQ06T , PHB11N06LT , PHB129NQ04LT .
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