PHB222NQ04LT Datasheet and Replacement
Type Designator: PHB222NQ04LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 268 nS
Cossⓘ - Output Capacitance: 1400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: D2PAK
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PHB222NQ04LT Datasheet (PDF)
phb222nq04lt php222nq04lt.pdf

PHP/PHB222NQ04LTN-channel TrenchMOS logic level FETRev. 01 13 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC
phb225nq04t php225nq04t.pdf

PHP/PHB225NQ04TN-channel TrenchMOS standard level FETRev. 01 12 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NDP710B | CED05N8 | MC08N005C | AON6794 | AON6996 | IRLR024 | BL10N70-A
Keywords - PHB222NQ04LT MOSFET datasheet
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History: NDP710B | CED05N8 | MC08N005C | AON6794 | AON6996 | IRLR024 | BL10N70-A



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