PHB222NQ04LT Datasheet. Specs and Replacement

Type Designator: PHB222NQ04LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 268 nS

Cossⓘ - Output Capacitance: 1400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: D2PAK

PHB222NQ04LT substitution

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PHB222NQ04LT datasheet

 ..1. Size:91K  philips
 phb222nq04lt php222nq04lt.pdf pdf_icon

PHB222NQ04LT

PHP/PHB222NQ04LT N-channel TrenchMOS logic level FET Rev. 01 13 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC... See More ⇒

 9.1. Size:91K  philips
 phb225nq04t php225nq04t.pdf pdf_icon

PHB222NQ04LT

PHP/PHB225NQ04T N-channel TrenchMOS standard level FET Rev. 01 12 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC ... See More ⇒

Detailed specifications: PHB145NQ06T, PHB146NQ06LT, PHB152NQ03LTA, PHB153NQ08LT, PHB160NQ08T, PHB174NQ04LT, PHB176NQ04T, PHB193NQ06T, IRF740, PHB225NQ04T, PHB23NQ10LT, PHB38N02LT, PHB4ND40E, PHB73N06T, PHB78NQ03LT, PHB95NQ04LT, PHB96NQ03LT

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