PHB23NQ10LT Datasheet and Replacement
Type Designator: PHB23NQ10LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 129 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: D2PAK
PHB23NQ10LT substitution
PHB23NQ10LT Datasheet (PDF)
phb23nq10lt.pdf

PHB23NQ10LTN-channel TrenchMOS logic level FETRev. 01 11 July 2006 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold TrenchMOS technology Fast switching1.3 Applications DC-to-DC converters General purpose switch
phb23nq10t phd23nq10t php23nq10t 1.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP23NQ10T, PHB23NQ10T PHD23NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 AgRDS(ON) 70 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a
phb23nq15t php23nq15t 1.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP23NQ15T, PHB23NQ15T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 23 AgRDS(ON) 90 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic enve
Datasheet: PHB152NQ03LTA , PHB153NQ08LT , PHB160NQ08T , PHB174NQ04LT , PHB176NQ04T , PHB193NQ06T , PHB222NQ04LT , PHB225NQ04T , 20N60 , PHB38N02LT , PHB4ND40E , PHB73N06T , PHB78NQ03LT , PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T .
History: PTN3006
Keywords - PHB23NQ10LT MOSFET datasheet
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History: PTN3006



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