PHB4ND40E Datasheet. Specs and Replacement

Type Designator: PHB4ND40E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: D2PAK

PHB4ND40E substitution

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PHB4ND40E datasheet

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PHB4ND40E

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PHB4ND40E

Philips Semiconductors Product specification PowerMOS transistors PHP4N60E, PHB4N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 4.5 A g Low thermal resistance RDS(ON) 2.5 s GENERAL DESCRIPTION N-channel, enh... See More ⇒

Detailed specifications: PHB160NQ08T, PHB174NQ04LT, PHB176NQ04T, PHB193NQ06T, PHB222NQ04LT, PHB225NQ04T, PHB23NQ10LT, PHB38N02LT, IRF540, PHB73N06T, PHB78NQ03LT, PHB95NQ04LT, PHB96NQ03LT, PHD108NQ03LT, PHD14NQ20T, PHD16N03LT, PHD16N03T

Keywords - PHB4ND40E MOSFET specs

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