All MOSFET. PHB4ND40E Datasheet

 

PHB4ND40E Datasheet and Replacement


   Type Designator: PHB4ND40E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: D2PAK
 

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PHB4ND40E Datasheet (PDF)

 ..1. Size:260K  philips
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PHB4ND40E

 9.1. Size:80K  philips
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PHB4ND40E

Philips Semiconductors Product specification PowerMOS transistors PHP4N60E, PHB4N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 4.5 Ag Low thermal resistanceRDS(ON) 2.5 sGENERAL DESCRIPTIONN-channel, enh

Datasheet: PHB160NQ08T , PHB174NQ04LT , PHB176NQ04T , PHB193NQ06T , PHB222NQ04LT , PHB225NQ04T , PHB23NQ10LT , PHB38N02LT , IRF540N , PHB73N06T , PHB78NQ03LT , PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T .

Keywords - PHB4ND40E MOSFET datasheet

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