PHB95NQ04LT
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHB95NQ04LT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 157
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 106
nS
Cossⓘ -
Output Capacitance: 450
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
D2PAK
PHB95NQ04LT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHB95NQ04LT
Datasheet (PDF)
..1. Size:88K philips
phb95nq04lt.pdf
PHB95NQ04LTN-channel TrenchMOS logic level FETRev. 01 11 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC con
8.1. Size:104K philips
php95n03lt phb95n03lt phe95n03lt.pdf
PHP/PHB/PHE95N03LTTrenchMOS logic level FETRev. 02 01 February 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP95N03LT in SOT78 (TO-220AB)PHB95N03LT in SOT404 (D2-PAK)PHE95N03LT in SOT226 (I2-PAK).2. Features Low on-state resistance Fast switching.3. App
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