PHB95NQ04LT Datasheet. Specs and Replacement

Type Designator: PHB95NQ04LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 157 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 106 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: D2PAK

PHB95NQ04LT substitution

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PHB95NQ04LT datasheet

 ..1. Size:88K  philips
 phb95nq04lt.pdf pdf_icon

PHB95NQ04LT

PHB95NQ04LT N-channel TrenchMOS logic level FET Rev. 01 11 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC con... See More ⇒

 8.1. Size:104K  philips
 php95n03lt phb95n03lt phe95n03lt.pdf pdf_icon

PHB95NQ04LT

PHP/PHB/PHE95N03LT TrenchMOS logic level FET Rev. 02 01 February 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP95N03LT in SOT78 (TO-220AB) PHB95N03LT in SOT404 (D2-PAK) PHE95N03LT in SOT226 (I2-PAK). 2. Features Low on-state resistance Fast switching. 3. App... See More ⇒

Detailed specifications: PHB193NQ06T, PHB222NQ04LT, PHB225NQ04T, PHB23NQ10LT, PHB38N02LT, PHB4ND40E, PHB73N06T, PHB78NQ03LT, IRFZ44, PHB96NQ03LT, PHD108NQ03LT, PHD14NQ20T, PHD16N03LT, PHD16N03T, PHD18NQ10T, PHD21N06LT, PHD22NQ20T

Keywords - PHB95NQ04LT MOSFET specs

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