All MOSFET. PHB95NQ04LT Datasheet

 

PHB95NQ04LT Datasheet and Replacement


   Type Designator: PHB95NQ04LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 157 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 106 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: D2PAK
 

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PHB95NQ04LT Datasheet (PDF)

 ..1. Size:88K  philips
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PHB95NQ04LT

PHB95NQ04LTN-channel TrenchMOS logic level FETRev. 01 11 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC con

 8.1. Size:104K  philips
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PHB95NQ04LT

PHP/PHB/PHE95N03LTTrenchMOS logic level FETRev. 02 01 February 2002 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP95N03LT in SOT78 (TO-220AB)PHB95N03LT in SOT404 (D2-PAK)PHE95N03LT in SOT226 (I2-PAK).2. Features Low on-state resistance Fast switching.3. App

Datasheet: PHB193NQ06T , PHB222NQ04LT , PHB225NQ04T , PHB23NQ10LT , PHB38N02LT , PHB4ND40E , PHB73N06T , PHB78NQ03LT , IRFZ44 , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , PHD22NQ20T .

History: 2SK1446 | BUK9624-55A | SVF2N60CNF

Keywords - PHB95NQ04LT MOSFET datasheet

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