All MOSFET. PHD16N03T Datasheet

 

PHD16N03T Datasheet and Replacement


   Type Designator: PHD16N03T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13.1 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: DPAK
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PHD16N03T Datasheet (PDF)

 ..1. Size:234K  philips
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PHD16N03T

PHD16N03TTrenchMOS standard level FETRev. 01 18 August 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHD16N03T in SOT428 (D-PAK).1.2 Features Fast Switching TrenchMOSTM technology.1.3 Applications DC-to-DC converters General purpose switch.

 6.1. Size:91K  philips
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PHD16N03T

PHD16N03LTN-channel TrenchMOS logic level FETRev. 01 08 March 2004 Product dataM3D3001. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Fast switching.1.3 Applications DC-to-DC converters General purpose switching.1.4 Quick reference da

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History: SSF8NP60U | BBL4001

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