PHD16N03T Datasheet. Specs and Replacement

Type Designator: PHD16N03T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.1 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: DPAK

PHD16N03T substitution

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PHD16N03T datasheet

 ..1. Size:234K  philips
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PHD16N03T

PHD16N03T TrenchMOS standard level FET Rev. 01 18 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHD16N03T in SOT428 (D-PAK). 1.2 Features Fast Switching TrenchMOSTM technology. 1.3 Applications DC-to-DC converters General purpose switch.... See More ⇒

 6.1. Size:91K  philips
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PHD16N03T

PHD16N03LT N-channel TrenchMOS logic level FET Rev. 01 08 March 2004 Product data M3D300 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Fast switching. 1.3 Applications DC-to-DC converters General purpose switching. 1.4 Quick reference da... See More ⇒

Detailed specifications: PHB4ND40E, PHB73N06T, PHB78NQ03LT, PHB95NQ04LT, PHB96NQ03LT, PHD108NQ03LT, PHD14NQ20T, PHD16N03LT, IRF640N, PHD18NQ10T, PHD21N06LT, PHD22NQ20T, PHD23NQ10T, PHD34NQ10T, PHD36N03LT, PHD37N06LT, PHD44N06LT

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