PHD21N06LT Datasheet. Specs and Replacement
Type Designator: PHD21N06LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 88 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: DPAK
PHD21N06LT substitution
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PHD21N06LT datasheet
phd21n06lt.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP21N06LT, PHB21N06LT Logic level FET PHD21N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 19 A Logic level compatible RDS(ON) 75 m (VGS = 5 V) g RDS(ON) 70 m (VGS = 10 V) s GENERAL DESCRIPTION ... See More ⇒
phb21n06lt phd21n06lt php21n06lt.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP21N06LT, PHB21N06LT Logic level FET PHD21N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 19 A Logic level compatible RDS(ON) 75 m (VGS = 5 V) g RDS(ON) 70 m (VGS = 10 V) s GENERAL DESCRIPTION ... See More ⇒
php21n06lt phb21n06lt phd21n06lt.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
Detailed specifications: PHB78NQ03LT, PHB95NQ04LT, PHB96NQ03LT, PHD108NQ03LT, PHD14NQ20T, PHD16N03LT, PHD16N03T, PHD18NQ10T, AO3400, PHD22NQ20T, PHD23NQ10T, PHD34NQ10T, PHD36N03LT, PHD37N06LT, PHD44N06LT, PHD50N06LT, PHD66NQ03LT
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