PHD44N06LT Datasheet. Specs and Replacement

Type Designator: PHD44N06LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 114 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 13 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: DPAK

PHD44N06LT substitution

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PHD44N06LT datasheet

 ..1. Size:64K  philips
 phd44n06lt.pdf pdf_icon

PHD44N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP44N06LT, PHB44N06LT, PHD44N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 44 A Stable off-state characteristics High thermal cycling performance RDS(ON) 28 m (VGS = 5 V) g Low thermal... See More ⇒

 ..2. Size:261K  inchange semiconductor
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PHD44N06LT

Isc N-Channel MOSFET Transistor PHD44N06LT FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol... See More ⇒

Detailed specifications: PHD16N03T, PHD18NQ10T, PHD21N06LT, PHD22NQ20T, PHD23NQ10T, PHD34NQ10T, PHD36N03LT, PHD37N06LT, 2N7000, PHD50N06LT, PHD66NQ03LT, PHD77NQ03T, PHD78NQ03LT, PHD82NQ03LT, PHD87N03LT, PHD96NQ03LT, PHD98N03LT

Keywords - PHD44N06LT MOSFET specs

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