PHP143NQ04T
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHP143NQ04T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 200
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 51
nS
Cossⓘ -
Output Capacitance: 710
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052
Ohm
Package:
TO-220AB
PHP143NQ04T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHP143NQ04T
Datasheet (PDF)
..1. Size:85K philips
phb143nq04t php143nq04t.pdf
PHP/PHB143NQ04TN-channel TrenchMOS standard level FETRev. 01 13 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC
9.1. Size:64K philips
phb14nq20t php14nq20t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP14NQ20T, PHB14NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching High thermal cycling performance ID = 14 A Low thermal resistancegRDS(ON) 230 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power
9.2. Size:269K philips
phd14nq20t php14nq20t.pdf
PHP/PHB/PHD14NQ20TTrenchMOS standard level FETRev. 03 11 March 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHP14NQ20T in SOT78 (TO-220AB)PHB14NQ20T in SOT404 (D2-PAK)PHD14NQ20T in SOT428 (D-PAK).1.2 Features Low on-state resistance Fast s
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