PHP152NQ03LTA MOSFET. Datasheet pdf. Equivalent
Type Designator: PHP152NQ03LTA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 87 nS
Cossⓘ - Output Capacitance: 1040 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-220AB
PHP152NQ03LTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHP152NQ03LTA Datasheet (PDF)
phb152nq03lta php152nq03lta.pdf
PHP/B152NQ03LTAN-channel TrenchMOS logic level FETRev. 01 05 March 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Low on-state resistance Low gate charge Low thermal resistance.1.3 Applications DC-to-DC converters Swi
php152nq03lta phb152nq03lta.pdf
PHP/B152NQ03LTAN-channel TrenchMOS logic level FETRev. 01 05 March 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Low on-state resistance Low gate charge Low thermal resistance.1.3 Applications DC-to-DC converters Swi
php15n06e 1.pdf
Philips Semiconductors Product specification PowerMOS transistor PHP15N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 15 ASwitched Mode Power Supplies Ptot Total power dissipation 60 W(SMPS), mo
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