PHP21N06T Datasheet and Replacement

Philips Semiconductors Product specification TrenchMOS transistor PHP21N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 21 Afeatures very low on-state r

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP21N06LT, PHB21N06LT Logic level FET PHD21N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 19 A Logic level compatibleRDS(ON) 75 m (VGS = 5 V)gRDS(ON) 70 m (VGS = 10 V)sGENERAL DESCRIPTION

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORSDATA SHEETPHP212Dual P-channel enhancementmode MOS transistor1997 Jun 18Product specificationSupersedes data of 1996 Oct 23File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationDual P-channel enhancement modePHP212MOS transistorFEATURES PINNING - SOT96-1 (SO8) High-speed switchingPIN SYMBOL DESCRIPTION