PHP21N06T datasheet, подбор замены

 ..1. Size:52K  philips
 php21n06t.pdf 

Philips Semiconductors Product specification TrenchMOS transistor PHP21N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 21 A features very low on-state r

 6.1. Size:114K  philips
 phb21n06lt phd21n06lt php21n06lt.pdf 

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP21N06LT, PHB21N06LT Logic level FET PHD21N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 19 A Logic level compatible RDS(ON) 75 m (VGS = 5 V) g RDS(ON) 70 m (VGS = 10 V) s GENERAL DESCRIPTION

 6.2. Size:229K  nxp
 php21n06lt phb21n06lt phd21n06lt.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.1. Size:89K  philips
 php212 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET PHP212 Dual P-channel enhancement mode MOS transistor 1997 Jun 18 Product specification Supersedes data of 1996 Oct 23 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification Dual P-channel enhancement mode PHP212 MOS transistor FEATURES PINNING - SOT96-1 (SO8) High-speed switching PIN SYMBOL DESCRIPTION