PHP36N03LT
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHP36N03LT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 57.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 43.4
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022
Ohm
Package:
TO-220AB
PHP36N03LT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHP36N03LT
Datasheet (PDF)
..1. Size:92K philips
phd36n03lt php36n03lt.pdf
PHD/PHP36N03LTN-channel TrenchMOS logic level FETRev. 02 8 June 2006 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level compatible Low gate charge1.3 Applications DC-to-DC converters Switched-mode power supplies1.4 Quick r
7.1. Size:51K philips
php36n06e.pdf
Philips Semiconductors Product specification PowerMOS transistor PHP36N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 41 Aautomotive applications, Switched Ptot Total power dissipation 125 WMode
7.2. Size:51K philips
php36n06e 1.pdf
Philips Semiconductors Product specification PowerMOS transistor PHP36N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 41 Aautomotive applications, Switched Ptot Total power dissipation 125 WMode
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