PHP36N03LT Datasheet and Replacement
Type Designator: PHP36N03LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 57.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 43.4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO-220AB
PHP36N03LT substitution
PHP36N03LT Datasheet (PDF)
phd36n03lt php36n03lt.pdf

PHD/PHP36N03LTN-channel TrenchMOS logic level FETRev. 02 8 June 2006 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level compatible Low gate charge1.3 Applications DC-to-DC converters Switched-mode power supplies1.4 Quick r
php36n06e.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP36N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 41 Aautomotive applications, Switched Ptot Total power dissipation 125 WMode
php36n06e 1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP36N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 41 Aautomotive applications, Switched Ptot Total power dissipation 125 WMode
Datasheet: PHP174NQ04LT , PHP176NQ04T , PHP21N06T , PHP222NQ04LT , PHP225NQ04T , PHP24N03LT , PHP32N06LT , PHP34NQ11T , 20N50 , PHP45N03LT , PHP45NQ15T , PHP52N06T , PHP54N06T , PHP66NQ03LT , PHP71NQ03LT , PHP73N06T , PHP75NQ08T .
History: IPT026N10N5 | NX7002BK
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History: IPT026N10N5 | NX7002BK



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