All MOSFET. PHP52N06T Datasheet

 

PHP52N06T Datasheet and Replacement


   Type Designator: PHP52N06T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-220AB
 

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PHP52N06T Datasheet (PDF)

 ..1. Size:203K  philips
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PHP52N06T

PHP52N06TN-channel TrenchMOS standard level FETRev. 02 25 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe

Datasheet: PHP222NQ04LT , PHP225NQ04T , PHP24N03LT , PHP32N06LT , PHP34NQ11T , PHP36N03LT , PHP45N03LT , PHP45NQ15T , P60NF06 , PHP54N06T , PHP66NQ03LT , PHP71NQ03LT , PHP73N06T , PHP75NQ08T , PHP78NQ03LT , PHP83N03LT , PHP96NQ03LT .

History: PHB66NQ03LT | IRF7739L1 | DMP3020LSS

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