PHP52N06T Datasheet. Specs and Replacement

Type Designator: PHP52N06T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO-220AB

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PHP52N06T datasheet

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PHP52N06T

PHP52N06T N-channel TrenchMOS standard level FET Rev. 02 25 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fe... See More ⇒

Detailed specifications: PHP222NQ04LT, PHP225NQ04T, PHP24N03LT, PHP32N06LT, PHP34NQ11T, PHP36N03LT, PHP45N03LT, PHP45NQ15T, AO4407, PHP54N06T, PHP66NQ03LT, PHP71NQ03LT, PHP73N06T, PHP75NQ08T, PHP78NQ03LT, PHP83N03LT, PHP96NQ03LT

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