All MOSFET. PHP66NQ03LT Datasheet

 

PHP66NQ03LT Datasheet and Replacement


   Type Designator: PHP66NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 57 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO-220AB
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PHP66NQ03LT Datasheet (PDF)

 ..1. Size:87K  philips
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PHP66NQ03LT

PHP/PHU66NQ03LTN-channel TrenchMOS logic level FETRev. 06 12 August 2004 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode field effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Logic level threshold Low on-state resistance.1.3 Applications DC-to-DC converters General purpose switching.1

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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