PHP75NQ08T Datasheet. Specs and Replacement
Type Designator: PHP75NQ08T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 157 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO-220AB
PHP75NQ08T substitution
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PHP75NQ08T datasheet
php75nq08t.pdf
PHP75NQ08T N-channel TrenchMOS standard level FET Rev. 02 2 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Featu... See More ⇒
Detailed specifications: PHP36N03LT, PHP45N03LT, PHP45NQ15T, PHP52N06T, PHP54N06T, PHP66NQ03LT, PHP71NQ03LT, PHP73N06T, 2SK3568, PHP78NQ03LT, PHP83N03LT, PHP96NQ03LT, PHP9N60E, PHU101NQ03LT, PHU108NQ03LT, PHU11NQ10T, PHU66NQ03LT
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