All MOSFET. PHP75NQ08T Datasheet

 

PHP75NQ08T Datasheet and Replacement


   Type Designator: PHP75NQ08T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 157 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO-220AB
 

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PHP75NQ08T Datasheet (PDF)

 ..1. Size:177K  philips
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PHP75NQ08T

PHP75NQ08TN-channel TrenchMOS standard level FETRev. 02 2 March 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featu

Datasheet: PHP36N03LT , PHP45N03LT , PHP45NQ15T , PHP52N06T , PHP54N06T , PHP66NQ03LT , PHP71NQ03LT , PHP73N06T , 5N65 , PHP78NQ03LT , PHP83N03LT , PHP96NQ03LT , PHP9N60E , PHU101NQ03LT , PHU108NQ03LT , PHU11NQ10T , PHU66NQ03LT .

History: STN3P6F6 | IPA60R450E6

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