PHP75NQ08T Datasheet and Replacement
Type Designator: PHP75NQ08T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 157 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO-220AB
PHP75NQ08T substitution
PHP75NQ08T Datasheet (PDF)
php75nq08t.pdf

PHP75NQ08TN-channel TrenchMOS standard level FETRev. 02 2 March 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featu
Datasheet: PHP36N03LT , PHP45N03LT , PHP45NQ15T , PHP52N06T , PHP54N06T , PHP66NQ03LT , PHP71NQ03LT , PHP73N06T , AO3401 , PHP78NQ03LT , PHP83N03LT , PHP96NQ03LT , PHP9N60E , PHU101NQ03LT , PHU108NQ03LT , PHU11NQ10T , PHU66NQ03LT .
History: NTMFS5C404NL | JCS7N80FC | BRCS3139ZK | PHP9N60E | SRC70R900 | HCS80R1K2ST | IPC100N04S5L-1R9
Keywords - PHP75NQ08T MOSFET datasheet
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History: NTMFS5C404NL | JCS7N80FC | BRCS3139ZK | PHP9N60E | SRC70R900 | HCS80R1K2ST | IPC100N04S5L-1R9



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