All MOSFET. PHP78NQ03LT Datasheet

 

PHP78NQ03LT Datasheet and Replacement


   Type Designator: PHP78NQ03LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 61 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 92 nS
   Cossⓘ - Output Capacitance: 389 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-220AB
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PHP78NQ03LT Datasheet (PDF)

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PHP78NQ03LT

PHP78NQ03LTN-channel TrenchMOS logic level FETRev. 06 30 January 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feature

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IXFA8N50P3 | IRLU9343PBF | 2SK3437 | AONS36333 | IRHM57260SE | 15NM70L-TF34-T | VST012N06MS

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