PHP78NQ03LT Datasheet. Specs and Replacement

Type Designator: PHP78NQ03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 61 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 92 nS

Cossⓘ - Output Capacitance: 389 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-220AB

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PHP78NQ03LT datasheet

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PHP78NQ03LT

PHP78NQ03LT N-channel TrenchMOS logic level FET Rev. 06 30 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feature... See More ⇒

Detailed specifications: PHP45N03LT, PHP45NQ15T, PHP52N06T, PHP54N06T, PHP66NQ03LT, PHP71NQ03LT, PHP73N06T, PHP75NQ08T, 10N65, PHP83N03LT, PHP96NQ03LT, PHP9N60E, PHU101NQ03LT, PHU108NQ03LT, PHU11NQ10T, PHU66NQ03LT, PHU77NQ03T

Keywords - PHP78NQ03LT MOSFET specs

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