PHP96NQ03LT Datasheet. Specs and Replacement

Type Designator: PHP96NQ03LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 725 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00495 Ohm

Package: TO-220AB

PHP96NQ03LT substitution

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PHP96NQ03LT datasheet

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PHP96NQ03LT

PHP/PHB/PHD96NQ03LT TrenchMOS logic level FET Rev. 05 5 June 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PHP96NQ03LT in SOT78 (TO-220AB) PHB96NQ03LT in SOT404 (D2-PAK) PHD96NQ03LT in SOT428 (D-PAK). 2. Features Low gate charge Low on-state resistance. 3. Appli... See More ⇒

Detailed specifications: PHP52N06T, PHP54N06T, PHP66NQ03LT, PHP71NQ03LT, PHP73N06T, PHP75NQ08T, PHP78NQ03LT, PHP83N03LT, RFP50N06, PHP9N60E, PHU101NQ03LT, PHU108NQ03LT, PHU11NQ10T, PHU66NQ03LT, PHU77NQ03T, PHU78NQ03LT, PHW7N60

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs