PHP9N60E Datasheet. Specs and Replacement

Type Designator: PHP9N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-220AB

PHP9N60E substitution

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PHP9N60E datasheet

 ..1. Size:29K  philips
php9n60e.pdf pdf_icon

PHP9N60E

Philips Semiconductors Preliminary specification PowerMOS transistors PHP9N60E, PHB9N60E, PHW9N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 8.7 A g Low thermal resistance RDS(ON) 0.85 s GENERAL DESCRIPTION ... See More ⇒

 9.1. Size:115K  philips
phb9nq20t phd9nq20t php9nq20t 2.pdf pdf_icon

PHP9N60E

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP9NQ20T, PHB9NQ20T PHD9NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 8.7 A g RDS(ON) 400 m s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using... See More ⇒

Detailed specifications: PHP54N06T, PHP66NQ03LT, PHP71NQ03LT, PHP73N06T, PHP75NQ08T, PHP78NQ03LT, PHP83N03LT, PHP96NQ03LT, SI2302, PHU101NQ03LT, PHU108NQ03LT, PHU11NQ10T, PHU66NQ03LT, PHU77NQ03T, PHU78NQ03LT, PHW7N60, PHW80NQ10T

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