All MOSFET. PHP9N60E Datasheet

 

PHP9N60E MOSFET. Datasheet pdf. Equivalent


   Type Designator: PHP9N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220AB

 PHP9N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHP9N60E Datasheet (PDF)

 ..1. Size:29K  philips
 php9n60e.pdf

PHP9N60E PHP9N60E

Philips Semiconductors Preliminary specification PowerMOS transistors PHP9N60E, PHB9N60E, PHW9N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 8.7 Ag Low thermal resistanceRDS(ON) 0.85 sGENERAL DESCRIPTION

 9.1. Size:115K  philips
 phb9nq20t phd9nq20t php9nq20t 2.pdf

PHP9N60E PHP9N60E

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP9NQ20T, PHB9NQ20T PHD9NQ20TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 8.7 AgRDS(ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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