All MOSFET. PHP9N60E Datasheet

 

PHP9N60E Datasheet and Replacement


   Type Designator: PHP9N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220AB
      - MOSFET Cross-Reference Search

 

PHP9N60E Datasheet (PDF)

 ..1. Size:29K  philips
 php9n60e.pdf pdf_icon

PHP9N60E

Philips Semiconductors Preliminary specification PowerMOS transistors PHP9N60E, PHB9N60E, PHW9N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 8.7 Ag Low thermal resistanceRDS(ON) 0.85 sGENERAL DESCRIPTION

 9.1. Size:115K  philips
 phb9nq20t phd9nq20t php9nq20t 2.pdf pdf_icon

PHP9N60E

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP9NQ20T, PHB9NQ20T PHD9NQ20TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 8.7 AgRDS(ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: WMS08P04TS | FTK3341 | BSZ215CH | STK820 | BSO080P03NS3G | QM8014U | 2SK1626

Keywords - PHP9N60E MOSFET datasheet

 PHP9N60E cross reference
 PHP9N60E equivalent finder
 PHP9N60E lookup
 PHP9N60E substitution
 PHP9N60E replacement

 

 
Back to Top

 


 
.