All MOSFET. PHP9N60E Datasheet

 

PHP9N60E Datasheet and Replacement


   Type Designator: PHP9N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220AB
 

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PHP9N60E Datasheet (PDF)

 ..1. Size:29K  philips
 php9n60e.pdf pdf_icon

PHP9N60E

Philips Semiconductors Preliminary specification PowerMOS transistors PHP9N60E, PHB9N60E, PHW9N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 8.7 Ag Low thermal resistanceRDS(ON) 0.85 sGENERAL DESCRIPTION

 9.1. Size:115K  philips
 phb9nq20t phd9nq20t php9nq20t 2.pdf pdf_icon

PHP9N60E

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP9NQ20T, PHB9NQ20T PHD9NQ20TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 8.7 AgRDS(ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using

Datasheet: PHP54N06T , PHP66NQ03LT , PHP71NQ03LT , PHP73N06T , PHP75NQ08T , PHP78NQ03LT , PHP83N03LT , PHP96NQ03LT , IRFZ46N , PHU101NQ03LT , PHU108NQ03LT , PHU11NQ10T , PHU66NQ03LT , PHU77NQ03T , PHU78NQ03LT , PHW7N60 , PHW80NQ10T .

History: CTLM8110-M832D | HSS2306A

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