PHU101NQ03LT Datasheet. Specs and Replacement
Type Designator: PHU101NQ03LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 600 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: IPAK
PHU101NQ03LT substitution
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PHU101NQ03LT datasheet
php101nq03lt phu101nq03lt.pdf
PHP/PHU101NQ03LT TrenchMOS logic level FET Rev. 02 25 February 2003 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PHP101NQ03LT in SOT78 (TO-220AB) PHU101NQ03LT in SOT533 (I-PAK). 2. Features Low gate charge Low on-state resistance. 3. Applications Optimized as a con... See More ⇒
phb108nq03lt phd108nq03lt phu108nq03lt.pdf
PHB/PHD/PHU108NQ03LT N-channel TrenchMOS logic level FET Rev. 03 18 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance Lead-free construction Low gate charge 1.3 Applicati... See More ⇒
Detailed specifications: PHP66NQ03LT, PHP71NQ03LT, PHP73N06T, PHP75NQ08T, PHP78NQ03LT, PHP83N03LT, PHP96NQ03LT, PHP9N60E, AO3407, PHU108NQ03LT, PHU11NQ10T, PHU66NQ03LT, PHU77NQ03T, PHU78NQ03LT, PHW7N60, PHW80NQ10T, PHX14NQ20T
Keywords - PHU101NQ03LT MOSFET specs
PHU101NQ03LT cross reference
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