PHU78NQ03LT Datasheet. Specs and Replacement
Type Designator: PHU78NQ03LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 66.4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 415 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: IPAK
PHU78NQ03LT substitution
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PHU78NQ03LT datasheet
phu78nq03lt phd78nq03lt.pdf
PHU/PHD78NQ03LT N-channel TrenchMOS logic level FET Rev. 05 27 July 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Fast switching 1.3 Applications Computer motherboards DC-to-DC converters 1.4 Quick referenc... See More ⇒
phu78nq03lt.pdf
PHU78NQ03LT N-channel TrenchMOS logic level FET Rev. 06 15 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features a... See More ⇒
Detailed specifications: PHP83N03LT, PHP96NQ03LT, PHP9N60E, PHU101NQ03LT, PHU108NQ03LT, PHU11NQ10T, PHU66NQ03LT, PHU77NQ03T, STF13NM60N, PHW7N60, PHW80NQ10T, PHX14NQ20T, PHX18NQ11T, PHX18NQ20T, PHX20N06T, PHX23NQ10T, PHX23NQ11T
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