PHW7N60 Datasheet. Specs and Replacement
Type Designator: PHW7N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-247
PHW7N60 substitution
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PHW7N60 datasheet
phw7n60 1.pdf
Philips Semiconductors Product specification PowerMOS transistor PHW7N60 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 600 V avalanche energy capability, stable ID Drain current (DC) 7 A off-state characteristics, fast Ptot Total power dissipation... See More ⇒
phw7n60.pdf
PHW7N60 Philips Semiconductors Product specification PowerMOS transistor PHW7N60 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 600 V avalanche energy capability, stable ID Drain current (DC) 7 A off-state characteristics, fast Ptot... See More ⇒
php7n60e phb7n60e phw7n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 7 A g Low thermal resistance RDS(ON) 1.2 s GENERAL DESCRIPTION N-chan... See More ⇒
Detailed specifications: PHP96NQ03LT, PHP9N60E, PHU101NQ03LT, PHU108NQ03LT, PHU11NQ10T, PHU66NQ03LT, PHU77NQ03T, PHU78NQ03LT, IRFZ24N, PHW80NQ10T, PHX14NQ20T, PHX18NQ11T, PHX18NQ20T, PHX20N06T, PHX23NQ10T, PHX23NQ11T, PHX27NQ11T
Keywords - PHW7N60 MOSFET specs
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