PHW7N60 Datasheet and Replacement. Cross Reference Search

PHW7N60 Datasheet (PDF)

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Philips Semiconductors Product specification PowerMOS transistor PHW7N60 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 600 Vavalanche energy capability, stable ID Drain current (DC) 7 Aoff-state characteristics, fast Ptot Total power dissipation

..2. Size:51K philips
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PHW7N60Philips Semiconductors Product specification PowerMOS transistor PHW7N60 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 600 Vavalanche energy capability, stable ID Drain current (DC) 7 Aoff-state characteristics, fast Ptot

0.1. Size:91K philips
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Philips Semiconductors Product specification PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 7 Ag Low thermal resistanceRDS(ON) 1.2 sGENERAL DESCRIPTIONN-chan

Datasheet: PHP96NQ03LT , PHP9N60E , PHU101NQ03LT , PHU108NQ03LT , PHU11NQ10T , PHU66NQ03LT , PHU77NQ03T , PHU78NQ03LT , AON6380 , PHW80NQ10T , PHX14NQ20T , PHX18NQ11T , PHX18NQ20T , PHX20N06T , PHX23NQ10T , PHX23NQ11T , PHX27NQ11T .