PHX18NQ11T Datasheet. Specs and Replacement
Type Designator: PHX18NQ11T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO-220F
PHX18NQ11T substitution
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PHX18NQ11T datasheet
phx18nq11t.pdf
PHX18NQ11T N-channel TrenchMOS standard level FET Rev. 02 24 March 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a fully isolated plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Isolated mounting base Low on-state resistance Fast switching Low ... See More ⇒
phx18nq20t-01.pdf
PHX18NQ20T N-channel enhancement mode field-effect transistor Rev. 01 28 August 2000 Product specification M3D308 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PHX18NQ20T in SOT186A. 2. Features TrenchMOS technology Low on-state resistance Fast switching Low thermal resistance ... See More ⇒
phx18nq20t.pdf
PHX18NQ20T N-channel enhancement mode field-effect transistor Rev. 01 28 August 2000 Product specification M3D308 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PHX18NQ20T in SOT186A. 2. Features TrenchMOS technology Low on-state resistance Fast switching Low thermal resistance ... See More ⇒
Detailed specifications: PHU108NQ03LT, PHU11NQ10T, PHU66NQ03LT, PHU77NQ03T, PHU78NQ03LT, PHW7N60, PHW80NQ10T, PHX14NQ20T, P60NF06, PHX18NQ20T, PHX20N06T, PHX23NQ10T, PHX23NQ11T, PHX27NQ11T, PHX45NQ11T, PHX8NQ11T, PHX9NQ20T
Keywords - PHX18NQ11T MOSFET specs
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