PHX18NQ11T MOSFET. Datasheet pdf. Equivalent

   Type Designator: PHX18NQ11T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO-220F

PHX18NQ11T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

PHX18NQ11T Datasheet (PDF)

..1. Size:83K philips
phx18nq11t.pdf

PHX18NQ11TN-channel TrenchMOS standard level FETRev. 02 24 March 2005 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a fullyisolated plastic package using TrenchMOS technology.1.2 Features Standard level threshold Isolated mounting base Low on-state resistance Fast switching Low

7.1. Size:293K philips
phx18nq20t-01.pdf

PHX18NQ20TN-channel enhancement mode field-effect transistorRev. 01 28 August 2000 Product specificationM3D3081. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHX18NQ20T in SOT186A.2. Features TrenchMOS technology Low on-state resistance Fast switching Low thermal resistance

7.2. Size:293K philips
phx18nq20t.pdf

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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PHX18NQ11T MOSFET. Datasheet pdf. Equivalent

PHX18NQ11T Datasheet (PDF)

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