PHX18NQ20T
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHX18NQ20T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 8.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18
Ohm
Package:
TO-220F
PHX18NQ20T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHX18NQ20T
Datasheet (PDF)
..1. Size:293K philips
phx18nq20t.pdf
PHX18NQ20TN-channel enhancement mode field-effect transistorRev. 01 28 August 2000 Product specificationM3D3081. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHX18NQ20T in SOT186A.2. Features TrenchMOS technology Low on-state resistance Fast switching Low thermal resistance
0.1. Size:293K philips
phx18nq20t-01.pdf
PHX18NQ20TN-channel enhancement mode field-effect transistorRev. 01 28 August 2000 Product specificationM3D3081. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHX18NQ20T in SOT186A.2. Features TrenchMOS technology Low on-state resistance Fast switching Low thermal resistance
7.1. Size:83K philips
phx18nq11t.pdf
PHX18NQ11TN-channel TrenchMOS standard level FETRev. 02 24 March 2005 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a fullyisolated plastic package using TrenchMOS technology.1.2 Features Standard level threshold Isolated mounting base Low on-state resistance Fast switching Low
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