All MOSFET. PHX18NQ20T Datasheet

 

PHX18NQ20T Datasheet and Replacement


   Type Designator: PHX18NQ20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220F
 

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PHX18NQ20T Datasheet (PDF)

 ..1. Size:293K  philips
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PHX18NQ20T

PHX18NQ20TN-channel enhancement mode field-effect transistorRev. 01 28 August 2000 Product specificationM3D3081. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHX18NQ20T in SOT186A.2. Features TrenchMOS technology Low on-state resistance Fast switching Low thermal resistance

 0.1. Size:293K  philips
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PHX18NQ20T

PHX18NQ20TN-channel enhancement mode field-effect transistorRev. 01 28 August 2000 Product specificationM3D3081. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHX18NQ20T in SOT186A.2. Features TrenchMOS technology Low on-state resistance Fast switching Low thermal resistance

 7.1. Size:83K  philips
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PHX18NQ20T

PHX18NQ11TN-channel TrenchMOS standard level FETRev. 02 24 March 2005 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a fullyisolated plastic package using TrenchMOS technology.1.2 Features Standard level threshold Isolated mounting base Low on-state resistance Fast switching Low

Datasheet: PHU11NQ10T , PHU66NQ03LT , PHU77NQ03T , PHU78NQ03LT , PHW7N60 , PHW80NQ10T , PHX14NQ20T , PHX18NQ11T , IRF520 , PHX20N06T , PHX23NQ10T , PHX23NQ11T , PHX27NQ11T , PHX45NQ11T , PHX8NQ11T , PHX9NQ20T , PJD1NA50 .

History: OSG70R1K4FF | SLD60R380S2 | IXTA4N150HV

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