All MOSFET. PHX27NQ11T Datasheet

 

PHX27NQ11T Datasheet and Replacement


   Type Designator: PHX27NQ11T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-220F
 

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PHX27NQ11T Datasheet (PDF)

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PHX27NQ11T

PHX27NQ11TN-channel TrenchMOS standard level FETRev. 01 14 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a fully isolated encapsulatedplastic package using TrenchMOS technology.1.2 Features Low on-state resistance Isolated package.1.3 Applications DC-to-DC converters Switched-mode power supplies.1.4 Qu

Datasheet: PHW7N60 , PHW80NQ10T , PHX14NQ20T , PHX18NQ11T , PHX18NQ20T , PHX20N06T , PHX23NQ10T , PHX23NQ11T , NCEP15T14 , PHX45NQ11T , PHX8NQ11T , PHX9NQ20T , PJD1NA50 , PJD1NA60 , PJD1NA60A , PJD1NA80 , PJD2NA60 .

History: FTK2N65P

Keywords - PHX27NQ11T MOSFET datasheet

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