PHX9NQ20T Datasheet. Specs and Replacement

Type Designator: PHX9NQ20T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 93 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-220F

PHX9NQ20T substitution

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PHX9NQ20T datasheet

 ..1. Size:113K  philips
 phf9nq20t phx9nq20t phx9nq20t.pdf pdf_icon

PHX9NQ20T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX9NQ20T , PHF9NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 5.2 A g RDS(ON) 400 m s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench te... See More ⇒

 ..2. Size:113K  philips
 phf9nq20t phx9nq20t 2.pdf pdf_icon

PHX9NQ20T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX9NQ20T , PHF9NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 5.2 A g RDS(ON) 400 m s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench te... See More ⇒

Detailed specifications: PHX18NQ11T, PHX18NQ20T, PHX20N06T, PHX23NQ10T, PHX23NQ11T, PHX27NQ11T, PHX45NQ11T, PHX8NQ11T, IRFZ46N, PJD1NA50, PJD1NA60, PJD1NA60A, PJD1NA80, PJD2NA60, PJD2NA60H, PJD2NA70, PJD3NA50

Keywords - PHX9NQ20T MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.