All MOSFET. PHX9NQ20T Datasheet

 

PHX9NQ20T Datasheet and Replacement


   Type Designator: PHX9NQ20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220F
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PHX9NQ20T Datasheet (PDF)

 ..1. Size:113K  philips
 phf9nq20t phx9nq20t phx9nq20t.pdf pdf_icon

PHX9NQ20T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX9NQ20T , PHF9NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 5.2 AgRDS(ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench te

 ..2. Size:113K  philips
 phf9nq20t phx9nq20t 2.pdf pdf_icon

PHX9NQ20T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX9NQ20T , PHF9NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 5.2 AgRDS(ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench te

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 12N65KG-TF3-T | HSK0008 | AP3P7R0EMT | 19N10G-TQ2-T | IPB65R190C6 | BSZ0908ND | SVF20N50F

Keywords - PHX9NQ20T MOSFET datasheet

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