All MOSFET. PHX9NQ20T Datasheet

 

 

PHX9NQ20T Datasheet and Replacement


   Type Designator: PHX9NQ20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220F
 

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PHX9NQ20T Datasheet (PDF)

 ..1. Size:113K  philips
 phf9nq20t phx9nq20t phx9nq20t.pdf pdf_icon

PHX9NQ20T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX9NQ20T , PHF9NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 5.2 AgRDS(ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench te

 ..2. Size:113K  philips
 phf9nq20t phx9nq20t 2.pdf pdf_icon

PHX9NQ20T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX9NQ20T , PHF9NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 5.2 AgRDS(ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench te

Datasheet: PHX18NQ11T , PHX18NQ20T , PHX20N06T , PHX23NQ10T , PHX23NQ11T , PHX27NQ11T , PHX45NQ11T , PHX8NQ11T , IRFZ46N , PJD1NA50 , PJD1NA60 , PJD1NA60A , PJD1NA80 , PJD2NA60 , PJD2NA60H , PJD2NA70 , PJD3NA50 .

Keywords - PHX9NQ20T MOSFET datasheet

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