PJD1NA60A Datasheet. Specs and Replacement

Type Designator: PJD1NA60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.9 Ohm

Package: TO-252

PJD1NA60A substitution

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PJD1NA60A datasheet

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PJD1NA60A

PPJN1NA60A / PJW1NA60A / PJU1NA60A / PJD1NA60A 600V N-Channel MOSFET 600 V 1 A Voltage Current Features RDS(ON), VGS@10V,ID@0.5A... See More ⇒

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PJD1NA60A

PPJN1NA60 / PJW1NA60 / PJU1NA60 / PJD1NA60 600V N-Channel MOSFET 600 V 1 A Voltage Current Features RDS(ON), VGS@10V,ID@0.5A... See More ⇒

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PJD1NA60A

PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 800V N-Channel MOSFET 800 V 1 A Voltage Current Features RDS(ON), VGS@10V,ID@0.5A... See More ⇒

 8.2. Size:424K  panjit
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PJD1NA60A

PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50 500V N-Channel MOSFET 500 V 1 A Voltage Current Features RDS(ON), VGS@10V,ID@0.5A... See More ⇒

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Detailed specifications: PHX23NQ10T, PHX23NQ11T, PHX27NQ11T, PHX45NQ11T, PHX8NQ11T, PHX9NQ20T, PJD1NA50, PJD1NA60, IRF9640, PJD1NA80, PJD2NA60, PJD2NA60H, PJD2NA70, PJD3NA50, PJD3NA80, PJD4NA60, PJD4NA65

Keywords - PJD1NA60A MOSFET specs

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