PJD2NA60 Datasheet and Replacement
Type Designator: PJD2NA60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 39.7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: TO-252
PJD2NA60 substitution
PJD2NA60 Datasheet (PDF)
pjd2na60 pjf2na60 pjp2na60 pju2na60.pdf

PPJU2NA60 / PJD2NA60 / PJP2NA60 / PJF2NA60 600V N-Channel MOSFET 600 V 2 A Voltage Current Features RDS(ON), VGS@10V,ID@1A
pjd2na60h pju2na60h.pdf

PPJU2NA60H / PJD2NA60H 600V N-Channel MOSFET 600 V 1.4 A Voltage Current Features RDS(ON), VGS@10V,ID@0.7A
pjd2na70 pjf2na70 pjp2na70 pju2na70.pdf

PPJU2NA70 / PJD2NA70 / PJP2NA70 / PJF2NA70 700V N-Channel MOSFET 700 V 2 A Voltage Current Features RDS(ON), VGS@10V,ID@2A
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: TK18A60V | WTM2306 | PJN1NA60A | TK4A60D | PJF2NA60 | IRLMS1902 | KTK697TV
Keywords - PJD2NA60 MOSFET datasheet
PJD2NA60 cross reference
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History: TK18A60V | WTM2306 | PJN1NA60A | TK4A60D | PJF2NA60 | IRLMS1902 | KTK697TV



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