PJD2NA60 Datasheet. Specs and Replacement

Type Designator: PJD2NA60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 39.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm

Package: TO-252

PJD2NA60 substitution

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PJD2NA60 datasheet

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PJD2NA60

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PJD2NA60

PPJU2NA60H / PJD2NA60H 600V N-Channel MOSFET 600 V 1.4 A Voltage Current Features RDS(ON), VGS@10V,ID@0.7A... See More ⇒

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Detailed specifications: PHX27NQ11T, PHX45NQ11T, PHX8NQ11T, PHX9NQ20T, PJD1NA50, PJD1NA60, PJD1NA60A, PJD1NA80, AON7403, PJD2NA60H, PJD2NA70, PJD3NA50, PJD3NA80, PJD4NA60, PJD4NA65, PJD4NA70, PJD4NA90

Keywords - PJD2NA60 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs