PJD3NA80 MOSFET. Datasheet pdf. Equivalent
Type Designator: PJD3NA80
Marking Code: D3NA80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
Package: TO-252
PJD3NA80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PJD3NA80 Datasheet (PDF)
..1. Size:458K panjit
pjd3na80 pjf3na80 pjp3na80 pju3na80.pdf
pjd3na80 pjf3na80 pjp3na80 pju3na80.pdf
PPJU3NA80 / PJD3NA80 / PJP3NA80 / PJF3NA80 800V N-Channel MOSFET 800 V 3 A Voltage Current Features RDS(ON), VGS@10V,ID@1.5A
8.1. Size:265K panjit
pjd3na50 pju3na50.pdf
pjd3na50 pju3na50.pdf
PPJU3NA50 / PJD3NA50 500V N-Channel MOSFET 500 V 3 A Voltage Current Features RDS(ON), VGS@10V,ID@1.5A
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
