All MOSFET. PJD3NA80 Datasheet

 

PJD3NA80 Datasheet and Replacement


   Type Designator: PJD3NA80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO-252
 

 PJD3NA80 substitution

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PJD3NA80 Datasheet (PDF)

 ..1. Size:458K  panjit
 pjd3na80 pjf3na80 pjp3na80 pju3na80.pdf pdf_icon

PJD3NA80

PPJU3NA80 / PJD3NA80 / PJP3NA80 / PJF3NA80 800V N-Channel MOSFET 800 V 3 A Voltage Current Features RDS(ON), VGS@10V,ID@1.5A

 8.1. Size:265K  panjit
 pjd3na50 pju3na50.pdf pdf_icon

PJD3NA80

PPJU3NA50 / PJD3NA50 500V N-Channel MOSFET 500 V 3 A Voltage Current Features RDS(ON), VGS@10V,ID@1.5A

Datasheet: PJD1NA50 , PJD1NA60 , PJD1NA60A , PJD1NA80 , PJD2NA60 , PJD2NA60H , PJD2NA70 , PJD3NA50 , MMIS60R580P , PJD4NA60 , PJD4NA65 , PJD4NA70 , PJD4NA90 , PJD5NA50 , PJD5NA80 , PJD6NA40 , PJD6NA70 .

Keywords - PJD3NA80 MOSFET datasheet

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