All MOSFET. PJD5NA80 Datasheet

 

PJD5NA80 Datasheet and Replacement


   Type Designator: PJD5NA80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 78 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO-252AA
 

 PJD5NA80 substitution

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PJD5NA80 Datasheet (PDF)

 ..1. Size:450K  panjit
 pjd5na80 pjf5na80 pjp5na80 pju5na80.pdf pdf_icon

PJD5NA80

PPJU5NA80 / PJD5NA80 / PJP5NA80 / PJF5NA80 800V N-Channel MOSFET 800 V 5 A Voltage Current Features RDS(ON), VGS@10V,ID@ 2.5A

 8.1. Size:395K  panjit
 pjd5na50 pjf5na50 pjp5na50 pju5na50.pdf pdf_icon

PJD5NA80

PPJU5NA50 / PJD5NA50 / PJP5NA50 / PJF5NA50 500V N-Channel MOSFET 500 V 5 A Voltage Current Features RDS(ON), VGS@10V,ID@2.5A

Datasheet: PJD2NA70 , PJD3NA50 , PJD3NA80 , PJD4NA60 , PJD4NA65 , PJD4NA70 , PJD4NA90 , PJD5NA50 , IRFP064N , PJD6NA40 , PJD6NA70 , PJD7NA60 , PJD7NA65 , PJD8NA50 , PJF10NA60 , PJF10NA65 , PJF10NA80 .

History: IPB017N08N5

Keywords - PJD5NA80 MOSFET datasheet

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