All MOSFET. PJF5NA80 Datasheet

 

PJF5NA80 MOSFET. Datasheet pdf. Equivalent

Type Designator: PJF5NA80

SMD Transistor Code: F5NA80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 48 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 28 nS

Drain-Source Capacitance (Cd): 78 pF

Maximum Drain-Source On-State Resistance (Rds): 2.7 Ohm

Package: ITO-220AB-F

PJF5NA80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

PJF5NA80 Datasheet (PDF)

1.1. pjd5na80 pjf5na80 pjp5na80 pju5na80.pdf Size:450K _panjit

PJF5NA80 PJF5NA80

PPJU5NA80 / PJD5NA80 / PJP5NA80 / PJF5NA80 800V N-Channel MOSFET 800 V 5 A Voltage Current Features  RDS(ON), VGS@10V,ID@ 2.5A<2.7Ω ITO-220AB-F TO-220AB  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive. TO-252AA TO-251AA  Green molding c

4.1. pjd5na50 pjf5na50 pjp5na50 pju5na50.pdf Size:395K _panjit

PJF5NA80 PJF5NA80

PPJU5NA50 / PJD5NA50 / PJP5NA50 / PJF5NA50 500V N-Channel MOSFET 500 V 5 A Voltage Current Features  RDS(ON), VGS@10V,ID@2.5A<1.55Ω ITO-220AB-F TO-220AB  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive. TO-252AA TO-251AA  Green molding

 

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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