PJP1NA80 Datasheet. Specs and Replacement

Type Designator: PJP1NA80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 17 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm

Package: TO-220AB

PJP1NA80 substitution

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PJP1NA80 datasheet

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PJP1NA80

PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80 800V N-Channel MOSFET 800 V 1 A Voltage Current Features RDS(ON), VGS@10V,ID@0.5A... See More ⇒

Detailed specifications: PJN1NA50, PJN1NA60, PJN1NA60A, PJP10NA60, PJP10NA65, PJP10NA80, PJP12NA60, PJP13NA50, IRLB4132, PJP2NA60, PJP2NA70, PJP3NA80, PJP4NA60, PJP4NA65, PJP4NA70, PJP4NA90, PJP5NA50

Keywords - PJP1NA80 MOSFET specs

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